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| sot-723 plastic-encapsulate diode s bzx84c2v4m-bzx84c39m zener diode features z planar die construction z 100mw power dissipation z zener voltages from 2.4 C 39v m aximum ratings ( t a =25 unless otherwise specified ) p aram eter s ymbol v alue u nit forward voltage @i f =10ma v f 0.9 v power dissipation (note 1) p d 100 mw thermal resistance from junction to ambient r ja 1250 /w operating te mperature t j 150 storage te mperature t stg - 5 5 ~ +150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a = 25 unless otherwise specified) zener voltage range (note 2) maximum zener impedance (note 3) maximum reverse current typical temperature coefficent @i zt =5 ma mv/c v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r type number type code nom(v) min(v) max(v) ma ? ma ua v min max bzx84c2v4m rb 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 bzx84c2v7m rc 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 bzx84c3v0m rd 3 2.8 3.2 5 95 600 1.0 20 1.0 -3.5 0 bzx84c3v3m re 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 bzx84c3v6m rf 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 bzx84c3v9m rg 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 bzx84c4v3m rh 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 bzx84c4v7m r1 4.7 4.4 5.0 5 80 600 1.0 3 2.0 -3.5 0.2 bzx84c5v1m r2 5.1 4.8 5.4 5 60 500 1.0 2 2.0 -2.7 1.2 BZX84C5V6M r3 5.6 5.2 6.0 5 40 480 1.0 1 2.0 -2.0 2.5 bzx84c6v2m r4 6.2 5.8 6.6 5 10 400 1.0 3 4.0 0.4 3.7 bzx84c6v8m r5 6.8 6.4 7.2 5 15 150 1.0 2 4.0 1.2 4.5 bzx84c7v5m r6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 bzx84c8v2m r7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 bzx84c9v1m r8 9.1 8.5 9.6 5 15 80 1.0 0.5 6.0 3.8 7.0 bzx84c10m r9 10 9.4 10.6 5 20 100 1.0 0.2 7.0 4.5 8.0 bzx84c11m p1 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 bzx84c12m p2 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 bzx84c13m p3 13 12.4 14.1 5 30 150 1.0 0.1 8.0 7.0 11.0 bzx84c15m p4 15 13.8 15.6 5 30 170 1.0 0.1 10.5 9.2 13.0 bzx84c16m p5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 bzx84c18m p6 18 16.8 19.1 5 45 200 1.0 0.1 12.6 12.4 16.0 bzx84c20m p7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 bzx84c22m p8 22 20.8 23.3 5 55 225 1.0 0.1 15.4 16.4 20.0 bzx84c24m p9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 bzx84c27m pa 27 25.1 28.9 2 80 250 0.5 0.1 18.9 21.4 25.3 bzx84c30m pb 30 28 32 2 80 300 0.5 0.1 21.0 24.4 29.4 bzx84c33m pc 33 31 35 2 80 300 0.5 0.1 23.1 27.4 33.4 bzx84c36m pd 36 34 38 2 90 325 0.5 0.1 25.2 30.4 37.4 bzx84c39m pe 39 37 41 2 130 350 0.5 0.1 27.3 33.4 41.2 notes: 1. valid provided that device terminals are kept at ambient temperature . 2. short duration pulse test used to minimize self-heating effect . 3. f =1 n hz . 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification |
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